N-Channel MOSFET High-Side Drive: When, Why and How?
I had previously shown how to drive N-channel MOSFETs in
low-side configuration. You can find the tutorial here:
http://tahmidmc.blogspot.com/2012/12/low-side-mosfet-drive-circuits-and_23.html
http://tahmidmc.blogspot.com/2012/12/low-side-mosfet-drive-circuits-and_23.html
I’ve been requested to write a tutorial/article regarding
high-side MOSFET drive. So, here I’ll talk about N-channel MOSFET high-side
drive.
Let’s first look at
the common low side configuration.
Fig. 1 - N-channel MOSFET configured as low-side switch
Now let’s look at a MOSFET
configured as a high-side switch.
Fig. 2 - N-channel MOSFET configured as high-side switch
You can quite easily see the difference between the
high-side configuration and the low-side configuration. In the low-side
configuration, the load is connected between the drain and +V, while the source
is connected to ground. Thus, the gate drive is referenced to ground. So by
applying a voltage of >7V (for Power MOSFETs) or >4V (for Logic Level
MOSFETs), the MOSFET can be fully turned on.
Now let’s talk about the high-side configuration. The load
is connected between the source and ground with the drain connected to +V. Thus
the gate drive is not referenced to ground as source is not connected to ground
and gate drive is related to VGS (voltage at gate with respect to source). I’ll
talk about this in a while.
The difference in operation for the MOSFET configured as
high-side switch as opposed to the MOSFET configured as low-side switch is
that, it acts as a current source whereas the MOSFET configured as low-side
switch acts as a current sink.
Now let’s go back to the high-side drive. Let’s say you
apply a voltage of 12V (with reference to ground) to the MOSFET gate. However,
when the MOSFET is on, voltage at source is equal to +V. Let’s assume +V is
+15V. Now the problem is +12V gate drive (with reference to ground) will not
keep the MOSFET on. When the MOSFET is on, the MOSFET source will be at a
potential of +15V. To be on, the MOSFET must have +8V VGS minimum. So, if
source is at +15V, the voltage at the gate with respect to ground must be at
least +23V. If source was at +300V, for example, gate drive would require a
minimum of +308V with respect to ground. This is if the gate drive is
referenced to ground. If you have a separate isolated power supply whose ground
and the ground of the MOSFET-based circuit are isolated, then you can use that to drive the MOSFET as well.
There are quite a few ways to drive MOSFETs in high-side
configuration. The first thing that might come into the minds of many of you
would be a boost converter circuit or a charge pump circuit to use as the drive
voltage for gate drive. This concept is sometimes used and isn’t wrong.
However, it is usually used when voltage gap between control circuit voltage
and gate drive requirement is small. If you needed to step up voltage from 12V
to 40V for example, you might be able to accomplish it quite easily. However, a
problem arises when there is the need to step up voltages from 12V to, say,
300V. In such situations, other solutions must be sought.
One simple solution is to use a gate drive transformer. This
is not a method I prefer and thus I will not talk about it here. If you are
interested, I might write another article just for gate drive transformers.
Another
solution is to use a separate/isolated power supply whose ground is
separate from the ground of the MOSFET-based circuit. See Fig. 3 below.
The other popular method is to use bootstrap based drive. In
this drive method, a capacitor is charged to the required VGS – let’s say 10V –
when the MOSFET is off. Then this capacitor is used during driving the MOSFET
to provide an additional 10V over the source.
First I’ll talk about the use of a separate/isolated power
supply. Here’s a circuit diagram illustrating this:
Fig. 3 - Driving a high-side N-channel MOSFET from a separate/isolated power supply (click image to enlarge)
When a logic high is given to “Drive Signal”, potential at
optocoupler pin 4 (emitter of optocoupler transistor) is about +12V with
respect to the ground / negative terminal/point of BAT1 – the separate/isolated
power supply. This point is connected to Q1 source. Thus Q2 turns on. About
+12V, with respect to Q1 source, is provided to Q1 gate. Thus Q1 is driven on.
When a logic low is given to “Drive Signal”, optocoupler pin
4 (emitter of optocoupler transistor) is at the same potential as the ground /
negative terminal/point of BAT1 – the separate/isolated power supply. So Q3
turns on and pulls Q1 gate low. Thus MOSFET Q1 is driven off.
Note that the optocoupler ground is the same ground as the ground of the MOSFET-based circuit.
Note that the optocoupler ground is the same ground as the ground of the MOSFET-based circuit.
Here’s the current flow for when the “Drive Signal” is a
logic high.
Fig. 4 - Current flow when driving a high-side N-channel MOSFET on, from a separate/isolated power supply (click image to enlarge)
This driver can be used for any duty cycle – all the way
from 0% to 100%. The driving frequency is limited by the speed of the
optocoupler. For high frequencies, optically isolated MOSFET drivers may be
used instead of the two transistors and the optocoupler – the optically
isolated MOSFET driver will be all that’s needed. Some such drivers are TLP250,
TLP350, HCPL3120, etc.
Now let’s talk about the boostrap based drive. Here
when the high-side MOSFET is off, a capacitor is charged from the
driving voltage. The capacitor charges through the load or a supporting
low-side MOFSET. When the high-side MOSFET is to be turned on/driven,
the voltage on the capacitor is used to drive the high-side MOSFET. Thus
the limitation of this method is quite obvious. A large enough
capacitor should be used for storing the required energy/charge for
keeping the high-side MOSFET on for the required time. At the same time,
the capacitor must be large enough that during the entire driving time,
the voltage doesn't fall below about 8V, in order to prevent the MOSFET
from being only partially on. Thus, the bootstrap based drive can not
be used for 100% or close to 100% duty cycle. And the lower the
frequency of operation, the larger the required capacitance.
The easiest
way to drive a MOSFET using the boostrap based drive is to use a dedicated high
side MOSFET driver. Some drivers come with just the high-side driver while many
come with both high-side and low-side drivers. IR2117, for example, is one
driver that contains a single driver that can be used to drive a high-side
MOSFET driver. IR2110, which is arguably the most popular high-low side MOSFET
driver, features a high-side driver and a low-side driver in a single device. I’ve
written a detailed tutorial regarding the use of IR2110. Here's the tutorial:
http://tahmidmc.blogspot.com/2013/01/using-high-low-side-driver-ir2110-with.html
http://tahmidmc.blogspot.com/2013/01/using-high-low-side-driver-ir2110-with.html
Besides the IR2110, there are many high-low side drivers
available. L6385E and NCP2181 are my personal favorites. You can choose from a wide range of high side and high-low side drivers.
No
matter which method you choose, once you know how to handle the drive
requirement, it's really easy. In most cases, I use the bootstrap based
drivers, although I do occasionally use isolated power-supply based
drive. None of these methods are too difficult and I hope I've managed
to provide you a clear answer to your question: "Why are high-side N-channel
MOSFETs to be driven differently from low-side N-channel MOSFETs, and how do we
drive the high-side N-channel MOSFET?" Do let me know your comments and feedback.